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General Information

Product Details

Chemical Structure

Chemical Structure of Poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB); CAS No. 220797-16-0; Chemical Formula (C₅₁H₆₁N)_n.

Applications

Poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB) is a triarylamine based semiconductor with a band gap of 3 eV (HOMO and LUMO levels of 5.3 and 2.3 eV, respectively) and a relatively high hole mobility of 2 ×10^-3 cm² V^-1 s^-1.

Due to its low ionisation potential and high hole mobility, TFB serves primarily as hole transport layer (HTL), hole-injection layer (HIL) and electron-blocking layer (EBL) material in organic electronic devices. When built into device as an interface material, TFB as an electron blocking layer will not only reduce the chance of electron leakage, but also reduce the possibility of exciton quenching between the interface of the active layer and charge transport layer (F8BT/MoO_x for example).

Ossila材料TFB CAS:220797-16-0

Device structure	ITO (120 nm)/PDOT:PSS(50 nm)/TFB (5 nm)/PYGTPA* (75 nm)/PEGPF* (10 nm)/Ca (10 nm)/Al (100 nm) [1]
Colour	Deep blue
Max. luminance	9,242 cd/m2
Max. Current Efficiency	0.85 cd/A
Bias	4.3 V

Ossila材料TFB CAS:220797-16-0

Device structure	ITO/c-ZnO (50 nm)/F8BT (80 nm)/MoO3(10 nm)/Au (50 nm) [2]	ITO/c-ZnO (50 nm)/F8BT (80 nm)/TFB (60 nm)/MoO3 (10 nm)/Au (50 nm) [2]
Colour	Green	Green
Max. luminance	9,370 cd/m2	16,460 cd/m2
Max. Current Efficiency	0.34 cd/A	0.93 cd/A
Bias	~ 0.60 V	~ 0.87 V

Device structure	ITO/ZnO/CsPbI3/TFB (60 nm)/MoO3 (5 nm)/Ag (80 nm) [3]
Colour	Red
Max. Luminance	206 cd/m2
Max. EQE	5.7%